Micron powers AI Everywhere at COMPUTEX 2026

Micron Technology Inc. announced a showcase of its full portfolio of AI-optimized memory and storage solutions during COMPUTEX 2026, empowering next-generation AI data center and intelligent edge applications. As AI workloads expand from training to large-scale inference, including reasoning-heavy and agent-based systems, the demands on memory and storage are intensifying across every layer of the compute stack and memory hierarchy. “AI context lengths are increasing by 30 times per year,1 while memory content per server has doubled in the past three years,” said Sumit Sadana, EVP and Chief Business Officer at Micron Technology. “System performance is now driven by memory bandwidth and memory capacity, more than ever before. This structural shift in the semiconductor ecosystem makes memory and storage indispensable strategic assets – and Micron is leading with a range of industry-first and industry’s best products, from HBM to DRAM and NAND solutions designed for the AI era.” Memory and storage as foundation of AI data center performance Micron's data center memory and storage portfolio is purpose-built to address every layer of the AI infrastructure hierarchy. High-bandwidth memory (HBM) powers high-speed model execution and hot key-value (KV) cache, while LPDDR and DDR deliver system memory for orchestration and long-context expansion (with LPDDR offering greater power efficiency). Data center SSDs round out the stack, offering high-performance drives to address persistent KV cache needs and high-capacity drives for massive data lakes. This tiered memory architecture, with Micron at the heart of every layer, optimizes latency, bandwidth, power, capacity and cost — offloading GPUs to maximize data center token production. Micron's latest milestones across the portfolio demonstrate this momentum: HBM: HBM4 36GB 12H enables a 2.6-times increase in large language model (LLM) inference throughput, measured in tokens per second for every two-times increase in bandwidth. SOCAMM: Micron is the only provider of a 256GB SOCAMM2, the world's highest capacity offering, extending leadership in low-power data center memory by delivering one-third the power and one-third the footprint versus standard RDIMMs. High-capacity RDIMMs: Micron sampled the company’s leading-edge 1γ (1 gamma) technology in the 256GB DDR5 RDIMM, which is capable of speeds up to 9,200 megatransfers per second (MT/s), is 40% faster than modules in volume production today, and has more than 40% lower operating power versus two 128GB modules. Data center SSDs: The Micron 9650 SSD was the world’s first commercially available PCIe Gen6 SSD and is designed to deliver high performance for AI inference and training workloads. Now available at up to 245TB, the Micron 6600 ION sets a new benchmark for density and power efficiency, reducing rack footprint by 82%, and power consumption by half, compared to HDD-based deployments. AI starts in cloud; edge delivers its value As AI inference expands from the data center to PCs, smartphones, vehicles and embedded systems, the demands on memory and storage are fundamentally changing. Micron is engineering for this shift: Higher-density DRAM keeps AI models and agents resident and running, while Micron's storage solutions evolve into an active working layer, supporting everything from local model caches on an AI PC to real-time sensor fusion inside a vehicle, delivering faster, more responsive AI experiences at every edge. LPCAMM: LPCAMM2 delivers up to 9,600 MT/s with LPDDR5X in a modular, low power 128-bit dual-channel design for thinner, lighter PCs. GDDR: GDDR7 delivers up to 1.5 TB/s system bandwidth, 60% higher than GDDR68 with up to 33% higher AI inference throughput. LPDDR: LPDDR5X delivers industry-leading low-power performance for real-time AI processing across PCs, smartphones, robotics and next-generation automotive platforms. Client SSDs: The Micron 4600 PCIe Gen5 NVMe SSD loads LLMs in under a second,10 with 107% better energy efficiency versus prior-generation Gen4 SSDs. UFS for automotive: UFS 4.1 delivers up to 4.2 GB/s, twice the previous generation, with 115°C thermal protection and functional safety compliance for advanced driver-assistance systems (ADAS) and in-vehicle AI. Shared commitment to AI's future AI has fundamentally recast memory as a defining strategic asset, requiring memory and compute to be designed together for optimal outcomes. Building on multi-generation leadership in DRAM and NAND process technology, most recently 1γ DRAM and G9 NAND, Micron is deepening its technical collaboration with partners across the ecosystem through cooperative design and engineering, bringing AI platforms to market faster and with greater system-level optimization. Backed by major manufacturing investments across the U.S., India, Japan, Singapore and Taiwan, Micron is positioned to deliver these innovations at scale.